Datasheet Details
| Part number | LTE42012R |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 72.90 KB |
| Description | NPN microwave power transistor |
| Datasheet |
 LTE42012R Datasheet
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General Description
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
Key Features
- Interdigitated structure provides high emitter efficiency.
- Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR.
- Gold metallization realizes very stable characteristics and excellent lifetime.
- Multicell geometry gives good balance of dissipated power and low thermal resistance.
- Input matching cell improves input impedance and allows an easier design of wideband circuits.