Datasheet Details
- Part number
- BLF9G20LS-160V
- Manufacturer
- NXP ↗
- File Size
- 125.24 KB
- Datasheet
- BLF9G20LS-160V-NXP.pdf
- Description
- Power LDMOS transistor
BLF9G20LS-160V Description
BLF9G20LS-160V Power LDMOS transistor Rev.2 * 21 May 2015 Product data sheet 1.Product profile 1.1 General .
160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
BLF9G20LS-160V Features
* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Excellent broadband performance
BLF9G20LS-160V Applications
* at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal
f
IDq
VDS PL(AV) Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1880
800 28 35.5 19.8 33.
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