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BLF9G38LS-90P - Power LDMOS transistor

Description

90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in the Doherty application demo circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Lower output capacitance for improved performance in Doherty.

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Full PDF Text Transcription

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BLF9G38LS-90P Power LDMOS transistor Rev. 2 — 3 July 2015 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty application demo circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) IS-95 3400 to 3600 28 15.1 12.7 37.0 ACPR (dBc) 37 [1] [1] Test signal: IS-95; pilot, paging, sync, 6 traffic channels with Walsh codes 8  13; PAR = 9.7 dB at 0.01 % probability. 1.
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