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BLF9G38LS-90P
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in the Doherty application demo circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
IS-95
3400 to 3600 28
15.1
12.7 37.0
ACPR (dBc) 37 [1]
[1] Test signal: IS-95; pilot, paging, sync, 6 traffic channels with Walsh codes 8 13; PAR = 9.7 dB at 0.01 % probability.
1.