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BLF9G38-10G
Power LDMOS transistor
Rev. 1 — 19 October 2017
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.
Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
3400 to 3600 70 28 2
17.7 26 30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing.
1.
BLF9G38-10G Datasheet
