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BLF988; BLF988S
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Table 1. Application information
Test signal
f (MHz)
PL(AV) (W)
PL(M) (W)
Gp D IMD3 (dB) (%) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB pulsed, class-AB
f1 = 860; f2 = 860.1 860
250 -
20.8 46 32
- 600 19.8 58 -
1.2 Features and benefits
Excellent ruggedness (VSWR 40 : 1 through all phases) Optimum thermal behavior and reliability, Rth(j-c) = 0.
BLF988 Datasheet
