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NES2427P-60 - 60 W S-BAND PUSH-PULL POWER GaAs MES FET

NES2427P-60 Description

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES2427P-60 60 W S-BAND PUSH-PULL POWER GaAs MES FET .
The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems.

NES2427P-60 Features

* Push-pull type N-channel GaAs MES FET
* VDS = 10.0 V operation
* High output power: PO (1 dB) = 60 W TYP.
* High linear gain: GL = 12.0 dB TYP.
* High power added efficiency: ηadd = 35 % TYP. @ VDS = 10.0 V, IDset = 12.0 A (total), f = 2.50, 2.70 GHz ORDERI

NES2427P-60 Applications

* for MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 2.4 to 2.7 GHz. The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon diox

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Datasheet Details

Part number
NES2427P-60
Manufacturer
NEC
File Size
44.49 KB
Datasheet
NES2427P-60_NEC.pdf
Description
60 W S-BAND PUSH-PULL POWER GaAs MES FET

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