NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET

NEC

Description

PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET .
The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems.

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Datasheet Specifications

Part number: NES1823P-100
Manufacturer: NEC
File Size: 154.63 KB
Datasheet: NES1823P-100_NEC.pdf
Description: 100W L-BAND PUSH-PULL POWER GaAs MESFET

Features

* Push-pull type N-channel GaAs MESFET
* High Output Power : 100 W TYP.
* High Linear Gain : 11.0 dB TYP.
* High Drain Efficiency: 50 % TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz ORDERING INFORMATION (PLAN) Part Number NES1823P-100 T-92 Package Supplying Form ESD pro

Applications

* for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching. The device employs Tungsten Silicide gates, via holes, plated heat sink, an

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NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET NEC

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