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NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET

NE651R479A Description

DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET .
The NE651R479A is a 0.

NE651R479A Features

* GaAs HJ-FET structure
* High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm Pout = +29.5 dBm TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm

NE651R479A Applications

* for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A. Reliability and performance uniformity are assured by NEC’s string

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Datasheet Details

Part number
NE651R479A
Manufacturer
NEC
File Size
69.20 KB
Datasheet
NE651R479A_NEC.pdf
Description
0.4 W L-BAND POWER GaAs HJ-FET

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0.4 L-BAND POWER GaAs HJ-FET NEC
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