NE6510179 1 W L-BAND POWER GaAs HJ-FET

NEC

Description

DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET .
The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems.

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Datasheet Specifications

Part number: NE6510179
Manufacturer: NEC
File Size: 77.80 KB
Datasheet: NE6510179_NEC.pdf
Description: 1 W L-BAND POWER GaAs HJ-FET

Features

* : Pout = +31.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm Pout = +32.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm Pout = +35.0 dBm TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
* High linear gain : GL = 15 dB TYP. @VDS = 3.5 V

NE6510179 Distributors

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NE6510179 L-BAND POWER GaAs HJ-FET NEC

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