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NE6510179A MEDIUM POWER GaAs HJ-FET

NE6510179A Description

FunctionalONTINUED Characteristics NEC's 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE6510179A .
NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitte.

NE6510179A Features

* LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel
* USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS
* HIGH OUTPUT POWER: 35 dBm TYP with 5.0 V Vdc 32.5 dBm TYP with 3.5 V Vdc
* HIGH LINEAR GAIN: 10 dB TYP at 1.9 GHz

NE6510179A Applications

* It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. OUTLINE DIMENSIONS (Uni

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Datasheet Details

Part number
NE6510179A
Manufacturer
CEL
File Size
683.57 KB
Datasheet
NE6510179A-CEL.pdf
Description
MEDIUM POWER GaAs HJ-FET

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MEDIUM POWER GaAs HJ-FET CEL
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