NE6510379A 3 W L-BAND POWER GaAs HJ-FET

NEC

Description

PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET .
The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems.

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Datasheet Specifications

Part number: NE6510379A
Manufacturer: NEC
File Size: 97.47 KB
Datasheet: NE6510379A_NEC.pdf
Description: 3 W L-BAND POWER GaAs HJ-FET

Features

* GaAs HJ-FET Structure
* High Output Power
* High Linear Gain : PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty PO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty : GL = 13 dB typ. @VDS = 3.5 V, IDset =

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NE6510379A L-BAND POWER GaAs HJ-FET NEC

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