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NE6510179A - 1 W L-BAND POWER GaAs HJ-FET

NEC

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Datasheet Details

Part number	NE6510179A
Manufacturer	NEC
File Size	77.80 KB
Description	1 W L-BAND POWER GaAs HJ-FET
Datasheet	NE6510179A_NEC.pdf

NE6510179A Product details

Description

The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems.

Features

: Pout = +31.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm Pout = +32.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm Pout = +35.0 dBm TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm.
High linear gain : GL = 15 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm GL = 10 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm GL = 10 dB TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm.
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Published: May 7, 2005 |