NE650R479A 0.4 W L / S-BAND POWER GaAs MES FET

NEC

Description

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET .
The NE650R479A is a 0.

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Datasheet Specifications

Part number: NE650R479A
Manufacturer: NEC
File Size: 79.45 KB
Datasheet: NE650R479A_NEC.pdf
Description: 0.4 W L / S-BAND POWER GaAs MES FET

Features

* High Output Power
* High Linear Gain : PO (1 dB) = +26 dBm typ. : 14 dB typ.
* High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 100 mA, f = 1.9 GHz ORDERING INFORMATION (PLAN) Part Number NE650R479A-T1 79A Package Supplying Form 12 mm tape width, 1 kpcs/reel Rem

Applications

* for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC’s

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NE650R479A 0.4 S-BAND POWER GaAs MES FET NEC

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