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NE650R279A 0.2 W L / S-BAND POWER GaAs MES FET

NE650R279A Description

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R279A 0.2 W L, S-BAND POWER GaAs MES FET .
The NE650R279A is a 0.

NE650R279A Features

* High Output Power
* High Linear Gain : PO (1 dB) = +23 dBm typ. : 16 dB typ.
* High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 50 mA, f = 1.9 GHz ORDERING INFORMATION (PLAN) Part Number NE650R279A-T1 79A Package Supplying Form 12 mm tape width, 1 kpcs/reel Rema

NE650R279A Applications

* for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC’s

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Datasheet Details

Part number
NE650R279A
Manufacturer
NEC
File Size
77.98 KB
Datasheet
NE650R279A_NEC.pdf
Description
0.2 W L / S-BAND POWER GaAs MES FET

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0.2 S-BAND POWER GaAs MES FET NEC
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