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NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

NE3210S01 Description

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET .
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

NE3210S01 Features

* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
* Gate Length: Lg ≤ 0.20 µm
* Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE3210S01-T1 NE3210S01-T1B Supplying Form Tape & reel 1 000 pcs. /reel Tape & reel

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Datasheet Details

Part number
NE3210S01
Manufacturer
NEC
File Size
62.71 KB
Datasheet
NE3210S01_NEC.pdf
Description
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

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BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET NEC
NEC NE3210S01-like datasheet