NE33200 - SUPER LOW NOISE HJ FET

California Eastern

NE33200 Datasheet Preview — Preview of NE33200 PDF

Datasheet Details

Part number	NE33200
Manufacturer	California Eastern
File Size	87.71 KB
Description	SUPER LOW NOISE HJ FET
Datasheet	NE33200-CaliforniaEastern.pdf

NE33200 Product details

Description

The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility.

Features

VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) 4 3.5 NOISE FIGURE &.

📁 NE33200 Similar Datasheet

NE33284 - L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
NE33284A - L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
NE33284A-SL - L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
NE33284A-T1 - L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
NE33284A-T1A - L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
NE334S01 - C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
NE334S01-T1 - C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
NE334S01-T1B - C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

Other Datasheets by California Eastern

Published: Aug 9, 2014 |