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NE350184C - HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Features

  • Super low noise figure and high associated gain NF = 0.7 dB TYP. , Ga = 13.5 dB TYP. @ f = 20 GHz.
  • Micro-X ceramic (84C) package.

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Datasheet Details

Part number NE350184C
Manufacturer CEL
File Size 227.48 KB
Description HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Datasheet download datasheet NE350184C Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems ORDERING INFORMATION Part Number NE350184C-T1 NE350184C-T1A Order Number NE350184C-T1-A NE350184C-T1A-A Package 84C (Pb-Free) Quantity 1 kpcs/reel 5 kpcs/reel Marking A Supplying Form • 12 mm wide embossed taping • Pin 4 (Gate) faces the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office.
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