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NE32400 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

NE32400 Description

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP .
NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility.

NE32400 Features

* Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP. , Ga = 11.0 dB TYP. at f = 12 GHz
* Gate Length : Lg = 0.25 µm
* Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32400 NE24200 Standard (Grade D) Grade C and B (B is special order) QUALITY GRADE APPL

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Datasheet Details

Part number
NE32400
Manufacturer
NEC
File Size
85.88 KB
Datasheet
NE32400_NEC.pdf
Description
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

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BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP NEC
NEC NE32400-like datasheet