Datasheet Details
| Part number | NE32400 |
|---|---|
| Manufacturer | NEC |
| File Size | 85.88 KB |
| Description | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP |
| Datasheet |
 NE32400 Datasheet
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Description
NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons.
Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.
Features
- Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP. , Ga = 11.0 dB TYP. at f = 12 GHz.
- Gate Length : Lg = 0.25 µm.
- Gate Width : Wg = 200 µm.