NCE80H11H N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Description

http://www.ncepower.com Pb Free Product NCE80H11H NCE N-Channel Enhancement Mode Power MOSFET .
The NCE80H11H uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: NCE80H11H
Manufacturer: NCE Power Semiconductor
File Size: 323.47 KB
Datasheet: NCE80H11H-NCEPowerSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =80V,ID =105A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technol

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NCE80H11H N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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