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NCE80H12D - N-Channel Enhancement Mode Power MOSFET

Description

The NCE80H12D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =80V,ID =120A RDS(ON).

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Datasheet Details

Part number NCE80H12D
Manufacturer NCE Power Semiconductor
File Size 335.40 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE80H12D Datasheet

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Full PDF Text Transcription (Reference)

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http://www.ncepower.com Pb Free Product NCE80H12D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H12D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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