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NCE80H11 N-Channel Enhancement Mode Power MOSFET

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Description

http://www.ncepower.com Pb Free Product NCE80H11 NCE N-Channel Enhancement Mode Power MOSFET .
The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
NCE80H11
Manufacturer
NCE Power
File Size
395.28 KB
Datasheet
NCE80H11-NCEPower.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ) Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special

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