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NCE2006NE N-Channel Enhancement Mode Power MOSFET

NCE2006NE Description

http://www.ncepower.com Pb Free Product NCE2006NE NCE N-Channel Enhancement Mode Power MOSFET .
The NCE2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

NCE2006NE Features

* VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
NCE2006NE
Manufacturer
NCE Power Semiconductor
File Size
349.30 KB
Datasheet
NCE2006NE-NCEPowerSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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📌 All Tags

N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor
NCE Power Semiconductor NCE2006NE-like datasheet