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NCE2011E NCE N-Channel Enhancement Mode Power MOSFET

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Description

http://www.ncepower.com Pb Free Product NCE2011E NCE N-Channel Enhancement Mode Power MOSFET .
The NCE2011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number
NCE2011E
Manufacturer
NCE Power Semiconductor
File Size
332.18 KB
Datasheet
NCE2011E-NCEPowerSemiconductor.pdf
Description
NCE N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =11A RDS(ON) < 7Ω @ VGS=2.5V RDS(ON) < 9Ω @ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product is acquired

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