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NCE02H10T N-Channel Enhancement Mode Power MOSFET

NCE02H10T Description

N-Channel Enhancement Mode Power MOSFET .
The HM100N20T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

NCE02H10T Features

* VDS =200V,ID =100A RDS(ON)

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Datasheet Details

Part number
NCE02H10T
Manufacturer
H&M Semiconductor
File Size
430.79 KB
Datasheet
NCE02H10T-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor NCE02H10T-like datasheet