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NCE02H10T N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Description

N-Channel Enhancement Mode Power MOSFET .
The HM100N20T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: NCE02H10T
Manufacturer: H&M Semiconductor
File Size: 430.79 KB
Datasheet: NCE02H10T-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =200V,ID =100A RDS(ON)

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NCE02H10T N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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