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NCE2025I N-Channel MOSFET

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Description

NCE2025I-VB NCE2025I-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (mΩ) 7 at VGS = 10 V 30 9 at VGS= 4.

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Datasheet Specifications

Part number
NCE2025I
Manufacturer
VBsemi
File Size
340.58 KB
Datasheet
NCE2025I-VBsemi.pdf
Description
N-Channel MOSFET

Features

* Halogen-free
* TrenchFET® Gen III Power MOSFET
* 100 % Rg Tested

Applications

* DC/DC Conversion - System Power RoHS COMPLIANT G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °

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