NCE0106R - N-Channel Enhancement Mode Power MOSFET

Description

The NCE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.

NCE Power Semiconductor

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Datasheet Details

Part number	NCE0106R
Manufacturer	NCE Power Semiconductor
File Size	348.35 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0106R Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE0106R NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Jun 6, 2015 |