• Part: NCE0107AK
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 394.49 KB
Download NCE0107AK Datasheet PDF
NCE Power Semiconductor
NCE0107AK
Description The NCE0107AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 100V,ID = 7A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.5V (Typ:140mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation Schematic diagram Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Marking and pin assignment TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package TO-252-2L Reel Size Tape width Quantity Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source...