• Part: NCE0106Z
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 334.84 KB
Download NCE0106Z Datasheet PDF
NCE Power Semiconductor
NCE0106Z
Description The NCE0106Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation S Schematic diagram Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply TO-92 view Package Marking and Ordering Information Device Marking Device Device Package 0106Z TO-92 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ,TSTG Limit 100 ±20 6 24 3 -55...