Datasheet Specifications
- Part number
- MTV16N50E
- Manufacturer
- Motorola
- File Size
- 331.02 KB
- Datasheet
- MTV16N50E_Motorola.pdf
- Description
- TMOS POWER FET 16 AMPERES 500 VOLTS
Description
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV16N50E/D Advance Information TMOS E-FET .™ Power Field Effect.
Features
* obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbedApplications
* in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTV16N50E Distributors
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