MTV32N20E TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV32N20E/D Advance Information TMOS E-FET.™ Power Field Effect Transistor D3PAK for .

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Datasheet Specifications

Part number: MTV32N20E
Manufacturer: Motorola
File Size: 264.86 KB
Datasheet: MTV32N20E_Motorola.pdf
Description: TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM

Features

* es switching losses. VDS = 0 V VGS = 0 V TJ = 25°C 8000 C, CAPACITANCE (pF) Crss 6000 4000 Ciss 2000 Coss 0 10 5 VGS 0 VDS 5 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transisto

Applications

* in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

MTV32N20E Distributors

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MTV32N20E TMOS POWER FET AMPERES 200 VOLTS RDSon 0.075 OHM Motorola

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