Datasheet Specifications
- Part number
- MTV10N100E
- Manufacturer
- Motorola
- File Size
- 323.36 KB
- Datasheet
- MTV10N100E_Motorola.pdf
- Description
- TMOS POWER FET 10 AMPERES 1000 VOLTS
Description
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV10N100E/D Designer's TMOS E-FET .™ Power Field Effect Transis.
Features
* OSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching peApplications
* that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageMTV10N100E Distributors
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