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MTV32N25E Power Field Effect Transistor

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Description

MTV32N25E Designer’s™ Data Sheet TMOS E *FET.™ Power Field Effect Transistor D3PAK for Surface Mount N *Channel Enhancement *Mode.

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Features

* power electronic loads are During the turn
* on and turn
* off delay times, gate current is inductive; the data in the figure is taken with a resistive load, not constant. The simplest calculation uses appropriate which approximates an optimally snubbed inductive load. values from t

Applications

* that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage
* blocking capability without degrading performance over time. In addition, this advanced TMOS E
* FET is desig

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