MRF21090R3 Datasheet (Motorola) - RF Power Field Effect Transistors

MRF21090R3, RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MRF21090/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

Typical W - CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH: Output Power 11.5 Watts Efficiency 16% Gain

MRF21090R3 Features

* MENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. R M bbb M (INSULATOR) (LID) M (INSULATOR) M ccc M T A M B S T A T A M B B M Freescale Semiconductor, Inc N ccc H M M M (LID) aaa M T A M B C E A (FL