MRF21085R3 Datasheet (Motorola) - RF Power Field Effect Transistors

MRF21085R3, RF Power Field Effect Transistors

Short Ferrite Bead, Fair Rite, #2743019447 43 pF Chip Capacitors, ATC #100B430JCA500X 10 pF Chip Capacitor, ATC #100B100JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050 2.7 pF Chip Capacitor, ATC #1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MRF21085/D The RF MOSFET Line RF Power Field Effect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.

Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ =

MRF21085R3 Features

* f2 = 2145 MHz 2110 2130 2150 2170 f, FREQUENCY (MHz) Figure 5. Third Order Intermodulation Distortion versus Output Power 14.5 14 13.5 13 12.5 12 11.5 2 10 Pout, OUTPUT POWER (WATTS) η VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz G ps 60 50 η, DRAIN EFFICIENCY (%) η, DRAIN EFFICIENCY (%) 40 30 20