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RA30H4452M1A - Silicon RF Power Modules

RA30H4452M1A Description

< Silicon RF Power Modules > RA30H4452M1A RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp.For Digital Mobile Radio .
The RA30H4452M1A is a 30-watt RF MOSFET Amplifier Module for 12.

RA30H4452M1A Features

* Enhancement-Mode MOSFET (IDD 0 @ VDD=12.5V, VGG1=0V, VGG2=0V)
* Pout>30W, T>40% @ VDD=12.5V, VGG1=3.4V,VGG2=5V, Pin=50mW
* Broadband Frequency Range: 440-520MHz
* High speed Output rise/fall time. Ton

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Datasheet Details

Part number
RA30H4452M1A
Manufacturer
Mitsubishi
File Size
1.10 MB
Datasheet
RA30H4452M1A-Mitsubishi.pdf
Description
Silicon RF Power Modules

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Silicon Power Modules Mitsubishi
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