RA30H4452M1A Silicon RF Power Modules

Mitsubishi

Description

< Silicon RF Power Modules > RA30H4452M1A RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp.For Digital Mobile Radio .
The RA30H4452M1A is a 30-watt RF MOSFET Amplifier Module for 12.

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Datasheet Specifications

Part number: RA30H4452M1A
Manufacturer: Mitsubishi
File Size: 1.10 MB
Datasheet: RA30H4452M1A-Mitsubishi.pdf
Description: Silicon RF Power Modules

Features

* Enhancement-Mode MOSFET (IDD 0 @ VDD=12.5V, VGG1=0V, VGG2=0V)
* Pout>30W, T>40% @ VDD=12.5V, VGG1=3.4V,VGG2=5V, Pin=50mW
* Broadband Frequency Range: 440-520MHz
* High speed Output rise/fall time. Ton

RA30H4452M1A Distributors

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RA30H4452M1A Silicon Power Modules Mitsubishi

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