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RA30H3340M - Silicon RF Power Modules

RA30H3340M Description

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M 330-400MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM D.
The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.

RA30H3340M Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 330-400MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=5V www. DataSheet4U. com
* 66 x 21 x 9.8 mm
* Line

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Datasheet Details

Part number
RA30H3340M
Manufacturer
Mitsubishi Electric
File Size
198.70 KB
Datasheet
RA30H3340M_MitsubishiElectric.pdf
Description
Silicon RF Power Modules

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Silicon Power Modules Mitsubishi Electric
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