Datasheet Details
- Part number
- RA30H0608M
- Manufacturer
- Mitsubishi Electric Semiconductor
- File Size
- 86.98 KB
- Datasheet
- RA30H0608M_MitsubishiElectricSemiconductor.pdf
- Description
- 30-watt RF MOSFET Amplifier Module
RA30H0608M Description
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M 68-88MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 .
The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.
RA30H0608M Features
* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
1
4 5
TENTATIVE
1 3 4 5 RF Input (Pin) 2 Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
* Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequen
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