Datasheet4U Logo Datasheet4U.com

RA30H1317M1 - Silicon RF Power Modules

RA30H1317M1 Description

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE RA30H1317M1OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp..
The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.

RA30H1317M1 Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

📥 Download Datasheet

Preview of RA30H1317M1 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
RA30H1317M1
Manufacturer
Mitsubishi
File Size
260.83 KB
Datasheet
RA30H1317M1-Mitsubishi.pdf
Description
Silicon RF Power Modules

📁 Related Datasheet

  • RA30H1317M - RF MOSFET MODULE (Mitsubishi Electric Semiconductor)
  • RA30H1721M - RoHS Compliance (Mitsubishi Electric)
  • RA30H0608M - 30-watt RF MOSFET Amplifier Module (Mitsubishi Electric Semiconductor)
  • RA30H2127M - 210-270MHz 30W 12.5V MOBILE RADIO (Mitsubishi Electric Semiconductor)
  • RA30H3340M - Silicon RF Power Modules (Mitsubishi Electric)
  • RA30H4047M - 400-470MHz 30W 12.5V MOBILE RADIO (Mitsubishi Electric Semiconductor)
  • RA30H4452M - 30-watt RF MOSFET Amplifier Module (Mitsubishi Electric Semiconductor)
  • RA30421051 - (RA3xxxx) Reed Relays (HAMLIN)

📌 All Tags

Mitsubishi RA30H1317M1-like datasheet