RA30H4452M - 30-watt RF MOSFET Amplifier Module

Mitsubishi Electric Semiconductor

RA30H4452M Description

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M 440-520MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM D.
The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.

RA30H4452M Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 440-520MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=5V
* 66 x 21 x 9.8 mm
* Linear operation is poss

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Datasheet Details

Part number: RA30H4452M
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 63.19 KB
Datasheet: RA30H4452M_MitsubishiElectricSemiconductor.pdf
Description: 30-watt RF MOSFET Amplifier Module

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30-watt MOSFET Amplifier Module Mitsubishi Electric Semiconductor

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