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MITSUBISHI HVIGBT MODULES
CM800DZ-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM800DZ-34H
q IC ................................................................... 800A q VCES ....................................................... 1700V q Insulated Type q 2-element in a Pack q AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130 114
57±0.25 57±0.25
4 - M8 NUTS
4(E1) E1
20
2(C2) C2
E1
C2
124±0.25 140 30
G1 G2 C1 3(C1) 1(E2) E2
CM
C1
E2
E1 G1 C1 C2 G2
E2
CIRCUIT DIAGRAM
16 40 6 - M4 NUTS 53
18 44 57 55.2
6 - φ 7 MOUNTING HOLES
11.85
screwing depth min. 7.7
screwing depth min.
CM800DZ-34H Datasheet
