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MITSUBISHI HVIGBT MODULES
CM800HB-66H
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM800HB-66H
q IC ................................................................... 800A q VCES ....................................................... 3300V q Insulated Type q 1-element in a pack
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130 114 57±0.25 57±0.25 4 - M8 NUTS
C
20
C
C
C
C
124 ±0.25
G E E E
CM C
E
E
E
G
140
40
CIRCUIT DIAGRAM
3 - M4 NUTS
10.35 10.65 48.8
6 - φ7MOUNTING HOLES
61.5 18 5.2
15 40
38
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
29.
CM800HB-66H Datasheet
