CM800DU-12H - Dual IGBT Module

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications.

Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.

Features

Low Drive Power.
Low VCE(sat).
Discrete Super-Fast Recovery Free-Wheel Diode.
Isolated Baseplate for Easy Heat Sinking.

Powerex Power Semiconductors

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Datasheet Details

Part number	CM800DU-12H
Manufacturer	Powerex Power Semiconductors
File Size	76.70 KB
Description	Dual IGBT Module
Datasheet	CM800DU-12H Datasheet
Additional preview pages of the CM800DU-12H datasheet.

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Full PDF Text Transcription

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CM800DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 800 Amperes/600 Volts A "R" (4 PLACES) E F G H G2 J E2 C2E1 E2 B E K E1 L M G1 C1 J "T" (4 PLACES) N "S" (3 PLACES) Q P D C Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Published: Mar 23, 2005 |