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CM800E2Z-66H - IGBT Module

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Datasheet Details

Part number CM800E2Z-66H
Manufacturer Mitsubishi Electric Semiconductor
File Size 82.81 KB
Description IGBT Module
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www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM800E2Z-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2Z-66H q IC ................................................................... 800A q VCES ....................................................... 3300V q Insulated Type q 1-elements in a pack (for brake) APPLICATION DC choppers, Dynamic braking choppers. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 57 ±0.25 190 171 57 ±0.25 57 ±0.25 6 - M8 NUTS C C C K (C) G E 124 ±0.25 140 C C C 40 20 E E A (E) CM E E E CIRCUIT DIAGRAM C E G 20.25 3 - M4 NUTS 79.4 61.5 41.25 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) w w w .D a S a t e e h U 4 t .
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