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MITSUBISHI HVIGBT MODULES
CM800E6C-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM800E6C-66H
q IC ................................................................... 800A q VCES ....................................................... 3300V q Insulated Type q 1-element in a Pack (for brake) q AISiC Baseplate
APPLICATION Traction drives, DC choppers, Dynamic braking choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57 ±0.1
190 ±0.5 171 ±0.1 57 ±0.1
57 ±0.1
6 - M8 NUTS C 20 –0.2
+0.1
C
C
K (C)
G E 124 ±0.1 140 ±0.5 40 ±0.2 E E A (E)
C
C
C
CM
E
E
E
CIRCUIT DIAGRAM
C
E
G
20.25 ±0.2 41.25 ±0.3 3 - M4 NUTS 79.4 ±0.3 61.5 ±0.3 61.5 ±0.3 13 ±0.2 5 ±0.
CM800E6C-66H Datasheet
