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MX043J, MX043 Datasheet - Microsemi

MX043J RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS PD Tj Tstg IS ISM θJC MAX. 200 200 +/-20 +/-30 44 28 132 44 tbd tbd 300 -55 to +125 -55 to +125 44.

MX043J Features

* Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤ IDM typical neutron

MX043_Microsemi.pdf

This datasheet PDF includes multiple part numbers: MX043J, MX043. Please refer to the document for exact specifications by model.
MX043J Datasheet Preview Page 2 MX043J Datasheet Preview Page 3

Datasheet Details

Part number:

MX043J, MX043

Manufacturer:

Microsemi ↗

File Size:

183.11 KB

Description:

Radiation hardened segr-resistant n-channel enhancement mode power mosfet.

Note:

This datasheet PDF includes multiple part numbers: MX043J, MX043.
Please refer to the document for exact specifications by model.

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TAGS

MX043J MX043 RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi

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