MX043 RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Microsemi

Description

2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MX043J MX043G 200 Volts 44 Amps 50 mΩ .
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET SYM.

📥 Download Datasheet

MX043 Datasheet Preview — Preview of MX043 PDF

Datasheet Specifications

Part number: MX043
Manufacturer: Microsemi ↗
File Size: 183.11 KB
Datasheet: MX043_Microsemi.pdf
Description: RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤ IDM typical neutron

MX043 Distributors

📁 Related Datasheet

MX045-xx MX004 MX009 MX0103A MX014 MX0141VA0

📌 All Tags

MX043 RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET Microsemi

Microsemi MX043-like datasheet