MX0160VPX High Power RF LDMOS FET

Innogration

Description

MX0160VPX LDMOS TRANSISTOR Document Number: MX0160VPX Preliminary Datasheet V1.0 550W, 50V High Power RF LDMOS FETs .
The MX0160VPX is a 550-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequen.

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Datasheet Specifications

Part number: MX0160VPX
Manufacturer: Innogration
File Size: 544.56 KB
Datasheet: MX0160VPX-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

Applications

* with frequencies HF to 0.2 GHz. It is the thermally enhancement of its peer MK0160VPX(S) MX0160VPX
* Typical performance(on 1.6-30MHz wideband test board with device soldered) VDS=50V,IDQ=1500mA, Signal：2-Tone space 650Hz CW, Freq(MHz) PAVG(W) Gain(dB) η(%) IMD3(dBc) 1.6 150 24.2 38 -35 5

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MX0160VPX High Power LDMOS FET Innogration

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