Datasheet Details
| Part number | MX086-4 |
|---|---|
| Manufacturer | Microsemi |
| File Size | 49.82 KB |
| Description | Battery Bypass Charge Diode |
| Datasheet |
 MX086-4 Datasheet
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| Part number | MX086-4 |
|---|---|
| Manufacturer | Microsemi |
| File Size | 49.82 KB |
| Description | Battery Bypass Charge Diode |
| Datasheet |
MX086-4 Datasheet
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Peak Repetitive Reverse Voltage (NOT A BLOCKING DIODE!) Average Rectified Forward Current, Tc≤ 125°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Junction Temperature Range (for bypass operation) Storage Temperature Range Thermal Resistance, Junction to Case: DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 µs, d/c≤ 2% SYMBOL IR VF1 VF2 VF3 CONDITIONS VR= 60 Vdc, Tc= 25°C IF= 100 mA, Tc= 25°C IF= 5 A, Tc= 25°C IF = 10A, Tc= 25°C MAX.60 50 300 -20 to +275
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