MX043J
Features
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- Harris FSC260R die total dose: 100 k RAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤ IDM typical neutron: 1013 neutrons/cm2 within pre-radiation parameter limits photocurrent: 17 n A/RAD(Si)/sec typical rated Safe Operating Area Curve for Single event Effects rugged polysilicon gate cell structure with ultrafast body diode low inductance surface mount power package available with “J-leads” (MX043J) or “gullwing-leads” (MX043G) very low thermal resistance reverse polarity available upon request add suffix “R”st
Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25° C
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS PD Tj Tstg IS ISM θJC MAX. 200 200 +/-20 +/-30 44 28 132 44 tbd tbd 300 -55 to +125 -55 to +125 44...
